Published July 1985
| Version v1
Journal article
Radiation-induced defects in sodium doped silicon measured by the DLTS method
Creators
- 1. Rostovskij-na-Donu Gosudarstvennyj Univ. (USSR). Nauchno-Issledovatel'skij Inst. Fiziki
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Радиационные дефекты в легированном натрием кремнии, измеренные методом DLTS
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 19
- Journal Issue
- 7
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 1284-1287
- ISSN
- 0015-3222
- CODEN
- FTPPA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 17020321
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANNEALING; ELECTRONS; ION IMPLANTATION; LOW TEMPERATURE; MEDIUM TEMPERATURE; MEV RANGE 01-10; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; SCHOTTKY BARRIER DIODES; SILICON; SODIUM ADDITIONS; TEMPERATURE DEPENDENCE; TIME DEPENDENCE
- Descriptors DEC
- ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; HEAT TREATMENTS; LEPTONS; MATERIALS; MEV RANGE; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SEMIMETALS
Optional Information
- Notes
- Short note. For English translation see the journal Soviet Physics - Semiconductors (USA).