Correlation between electrophysical parameters and structure microdefects of dislocation-free silicon crystals

For dislocation-free high-resistance Si crystals, the correlation of their electrophysical parameters (the resistivity ρ and the lifetime τ of charge carriers) with concentration and transverse distribution of micro-defects was studied. Si plates that contained the areas with microdefects of different types (interstertial A-defects and vacancy-type D-defects) manifested a substantially increased compensation in the areas containing D-defects. We also studied the effect of heat treatment (at 500-900 degrees C) on the behavior of microdefects and the τ value. We found that heat treatment resulted in the change of the concentration of defects Ndefand in the τ value with higher τ corresponding to higher Ndef. This fact suggests that microdefects exert an indirect influence on the recombination process. 6 refs., 4 figs