Published November 3, 2017 | Version v1
Journal article

Terahertz-infrared electrodynamics of single-wall carbon nanotube films

  • 1. Moscow Institute of Physics and Technology, Dolgoprudnyi, Moscow Region, 141700 (Russian Federation)
  • 2. Skolkovo Institute of Science and Technology, Nobel str. 3, 143026, Moscow (Russian Federation)
  • 3. Canatu Oy, Konalankuja 5, FI-00390 Helsinki (Finland)

Description

Broad-band (4–20 000 cm−1) spectra of real and imaginary conductance of a set of high-quality pristine and AuCl3-doped single-walled carbon nanotube (SWCNT) films with different transparency are systematically measured. It is shown that while the high-energy (≥1 eV) response is determined by well-known interband transitions, the lower-energy electrodynamic properties of the films are fully dominated by unbound charge carriers. Their main spectral effect is seen as the free-carrier Drude-type contribution. Partial localization of these carriers leads to a weak plasmon resonance around 100 cm−1. At the lowest frequencies, below 10 cm−1, a gap-like feature is detected whose origin is associated with the energy barrier experienced by the carriers at the intersections between SWCNTs. It is assumed that these three mechanisms are universal and determine the low-frequency terahertz-infrared electrodynamics of SWCNT wafer-scale films. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6528/aa87d1

Additional details

Identifiers

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
28
Journal Issue
44
Journal Page Range
[8 p.]
ISSN
0957-4484