Published 1992 | Version v1
Journal article

HF hopping photoconductivity through excited states of B in Si

Description

The localization process of ionized and excited B atoms on the shortest distances from one to another includes a hopping translation of excitation or charge by majority impurity atoms. The possible nature of B metastable excited states in Si is discussed

Additional details

Additional titles

Original title (Russian)
Высокочастотная прыжковая фотопроводимость по возбужденным состояниям примеси бора в кремнии

Publishing Information

Journal Title
Zhurnal Ehksperimental'noj i Teoreticheskoj Fiziki
Journal Volume
102
Journal Issue
2
Journal Page Range
p. 660-669.
ISSN
0044-4510
CODEN
ZETFA7

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
24035490
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CRYSTALS; ELECTRIC FIELDS; LIFETIME; METASTABLE STATES; PHOTOCONDUCTIVITY; SILICON
Descriptors DEC
ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY LEVELS; EXCITED STATES; PHYSICAL PROPERTIES; SEMIMETALS