Published 1992
| Version v1
Journal article
HF hopping photoconductivity through excited states of B in Si
Creators
Description
The localization process of ionized and excited B atoms on the shortest distances from one to another includes a hopping translation of excitation or charge by majority impurity atoms. The possible nature of B metastable excited states in Si is discussed
Additional details
Additional titles
- Original title (Russian)
- Высокочастотная прыжковая фотопроводимость по возбужденным состояниям примеси бора в кремнии
Publishing Information
- Journal Title
- Zhurnal Ehksperimental'noj i Teoreticheskoj Fiziki
- Journal Volume
- 102
- Journal Issue
- 2
- Journal Page Range
- p. 660-669.
- ISSN
- 0044-4510
- CODEN
- ZETFA7
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 24035490
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTALS; ELECTRIC FIELDS; LIFETIME; METASTABLE STATES; PHOTOCONDUCTIVITY; SILICON
- Descriptors DEC
- ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY LEVELS; EXCITED STATES; PHYSICAL PROPERTIES; SEMIMETALS