Published November 15, 1993 | Version v1
Journal article

Linear-muffin-tin-orbital calculation of TaC(001) surface relaxation

  • 1. Department of Physics, Memphis State University, Memphis, Tennessee 38152 (United States)
  • 2. Department of Physics, West Virginia University, Morgantown, West Virginia 26506-6315 (United States)
  • 3. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

Description

Recent experimental work on the (001) surface of tantalum carbide has shown that this material is among the class of compounds which exhibit a marked rippling relaxation. We report here on a total-energy calculation of the relaxation of TaC(001), using a full-potential, linear-combination-of-muffin-tin-orbitals electronic-structure method. We obtain good agreement between calculated and experimental values for the degree of relaxation, and a detailed analysis of the physical mechanisms involved leads us to conclude that the nature of the rippled relaxation is determined primarily by the electrostatics associated with the bulk charge density. We also discuss other properties of the TaC(001) surface, including surface core-level shifts

Additional details

Publishing Information

Journal Title
Physical Review. B, Condensed Matter
Journal Volume
48
Journal Issue
20
Journal Page Range
p. 15301-15310.
ISSN
0163-1829
CODEN
PRBMDO

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
25021379
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CHARGE DENSITY; COULOMB ENERGY; ELECTRONIC STRUCTURE; MUFFIN-TIN POTENTIAL; RELAXATION; SURFACE PROPERTIES; TANTALUM CARBIDES
Descriptors DEC
CARBIDES; CARBON COMPOUNDS; ENERGY; POTENTIALS; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS