Published November 15, 1993
| Version v1
Journal article
Linear-muffin-tin-orbital calculation of TaC(001) surface relaxation
Creators
- 1. Department of Physics, Memphis State University, Memphis, Tennessee 38152 (United States)
- 2. Department of Physics, West Virginia University, Morgantown, West Virginia 26506-6315 (United States)
- 3. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
Description
Recent experimental work on the (001) surface of tantalum carbide has shown that this material is among the class of compounds which exhibit a marked rippling relaxation. We report here on a total-energy calculation of the relaxation of TaC(001), using a full-potential, linear-combination-of-muffin-tin-orbitals electronic-structure method. We obtain good agreement between calculated and experimental values for the degree of relaxation, and a detailed analysis of the physical mechanisms involved leads us to conclude that the nature of the rippled relaxation is determined primarily by the electrostatics associated with the bulk charge density. We also discuss other properties of the TaC(001) surface, including surface core-level shifts
Additional details
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter
- Journal Volume
- 48
- Journal Issue
- 20
- Journal Page Range
- p. 15301-15310.
- ISSN
- 0163-1829
- CODEN
- PRBMDO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 25021379
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHARGE DENSITY; COULOMB ENERGY; ELECTRONIC STRUCTURE; MUFFIN-TIN POTENTIAL; RELAXATION; SURFACE PROPERTIES; TANTALUM CARBIDES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; ENERGY; POTENTIALS; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS