Published April 1995
| Version v1
Journal article
Type 2 GaInAsSb/InAs heterojunctions
Creators
- 1. AN SSSR, Leningrad (Russian Federation). Fiziko-Tekhnicheskij Inst.
Description
At the first time an investigation was made into the heterojunctions based on a quaternary lattice-matched with InAs (100) substrates. Four type of GaInAsSb/InAs heterostructures (N-n, P-p and P-n ones) were produced and studied. It is found that heterojunction is a type 2 broken-gap one. A high electron mobility was first observed (μn = 70000 cm2/Vxs at T = 77 K) in GaInAsSb/InAs single heterostructure obtained by growing an undoped quaternary alloy on a low-doped p-InAs substrates. 19 refs.; 5 figs
Additional details
Additional titles
- Original title (Russian)
- Гетеропереходы 2 типа GaInAsSb/InAs
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 29
- Journal Issue
- 4
- Journal Page Range
- p. 678-686.
- ISSN
- 0015-3222
- CODEN
- FTPPA4
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 26075929
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ANTIMONIDES; INDIUM ARSENIDES; PHOTOLUMINESCENCE; SOLID SOLUTIONS
- Descriptors DEC
- ANTIMONIDES; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; DISPERSIONS; ELECTRICAL PROPERTIES; EMISSION; GALLIUM COMPOUNDS; HOMOGENEOUS MIXTURES; INDIUM COMPOUNDS; LUMINESCENCE; MIXTURES; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SOLUTIONS