Published July 15, 2000 | Version v1
Journal article

Distorted iron films on GaAs(001)-(4x6)

  • 1. Department of Physics, Simon Fraser University, Burnaby, British Columbia, V5A 1S6 (Canada)

Description

Polarized K-edge x-ray absorption fine structure spectroscopy (XAFS) studies were performed both in and ex situ on iron films deposited on GaAs substrates. Samples with 5 and 10 ML (monolayers) of iron deposited on sulfur-passivated and (4x6)-reconstructed GaAs(001) surfaces, respectively, were studied ex situ (capped with 20 ML of gold) and compared with 9.3 ML on GaAs(001)-(4x6) measured in situ. Analysis of XAFS spectra for both samples on (4x6)-GaAs reveals a tetragonal distortion of the iron film relative to bulk body-centered-cubic iron. The distortion involves an in-plane contraction and an expansion perpendicular to the GaAs surface to give a c/a ratio of 1.03(1), with a comparable to half the bulk lattice constant of GaAs. The sample on sulfur-passivated GaAs did not exhibit this distortion

Additional details

Identifiers

DOI
10.1103/PhysRevB.62.2151;
PII
S0163-1829(00)07127-7;

Publishing Information

Journal Title
Physical Review. B, Condensed Matter and Materials Physics
Journal Volume
62
Journal Issue
3
Journal Page Range
p. 2151-2157
ISSN
1098-0121

Optional Information

Notes
(c) 2000 The American Physical Society