Published January 17, 1980
| Version v1
Journal article
Effectiveness of charged vacancies in diffusion of implanted boron in silicon
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Electron. Lett.
- Journal Volume
- 16
- Journal Issue
- 2
- Series
- Electron. Lett.
- Journal Page Range
- 49-50
- ISSN
- 0013-5194
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 11515225
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- BORON IONS; COMPUTER CALCULATIONS; DIFFUSION; ELECTRIC CHARGES; FABRICATION; ION IMPLANTATION; MATHEMATICAL MODELS; SEMICONDUCTOR MATERIALS; SILICON; SIMULATION; TEMPERATURE DEPENDENCE; VACANCIES
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; IONS; POINT DEFECTS; SEMIMETALS
Optional Information
- Notes
- Brief note.