Published April 1987 | Version v1
Journal article

Structural lattice defects in silicon observed at 111In by perturbed angular correlation

  • 1. Konstanz Univ. (Germany, F.R.). Fakultaet fuer Physik

Description

Probing of structural defects in silicon by the perturbed γγ angular correlation (PAC) technique is demonstrated between 77 K and 1300 K. The behaviour of radioactive 111In probe atoms implanted at 295 K, is monitored during isochronal annealing in n-type, p-type and intrinsic Si. Trapping of defects, produced by the 111In implantation itself or by postirradiation is studied in P-doped crystals (1016/cm3-1017/cm3). (orig.)

Additional details

Publishing Information

Journal Title
Hyperfine Interact.
Journal Volume
35
Journal Issue
1-4
Series
Hyperfine Interact.
Journal Page Range
719-722
ISSN
0304-3843
CODEN
HYIND

Conference

Title
7. international conference on hyperfine interactions (HFI-7) and exhibition.
Dates
8-12 Sep 1986.
Place
Bangalore (India).