Peculiarities of ''alloy'' scattering in semiconductors
Creators
- 1. F. Tavadze Institute of Metallurgy & Materials Science, Tbilisi (Georgia)
Description
There is investigated the effect of nanometer size disordered regions in SixGe1-x and InPxAs1-x semiconductor alloys on the charge carriers mobility. An investigation has shown that composition dependence of the mobility appears as result of competition of main processes of current carriers scattering on phonons, ionized impurities and ''alloy'' disorders in SixGe1-x and InPxAs1-x alloys. We have calculated the contribution of these scattering processes into total scattering. Share of contribution of ''alloy'' disorders into the total mobility is different for SixGe1-x and InPxAs1-x solid solutions. Unlike SixGe1-x alloys the ''alloy'' disorders in InPxAs1-x practically do not disturb the crystal lattice in tangible way at temperatures in the range of 4.2 - 300 K because of sublattices of InP and InAs retain a certain individuality in InPxAs1-x alloys. (author)
Additional details
Publishing Information
- Journal Title
- Nano Studies
- Journal Issue
- no.2016
- Journal Page Range
- p. 95
- ISSN
- 1987-8826
Conference
- Title
- 4. International Conference ''Nanotechnologies''
- Acronym
- Nano-2016
- Dates
- 24-27 Oct 2016
- Place
- Tbilisi (Georgia)
INIS
- Country of Publication
- Georgia
- Country of Input or Organization
- Georgia
- INIS RN
- 54059815
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ADMINISTRATIVE PROCEDURES; ALLOYS; CARRIER MOBILITY; CHARGE CARRIERS; COMPETITION; CRYSTAL LATTICES; CURRENTS; IMPURITIES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; PHONONS; SCATTERING; SEMICONDUCTOR MATERIALS; SOLID SOLUTIONS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; DISPERSIONS; HOMOGENEOUS MIXTURES; INDIUM COMPOUNDS; MATERIALS; MIXTURES; MOBILITY; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; QUASI PARTICLES; SOLUTIONS