Published 2019 | Version v1
Book Metadata-only

Equally normalized Compton profiles and electronic properties of A2O3 (A= Ga and In) using hybrid PBEO approximations

Creators

  • 1. Department of Physics, Career Point University, Kota-324007 (Rajasthan) (India)
  • 2. Department of Pure and Applied Physics, University of Kota, Kota-324005 (Rajasthan) (India)
  • 3. Department of Physics, M.L. Sukhadia University, Udaipur 313001 (Rajasthan) (India)

Description

We have calculated theoretical Compton profiles (CPs) of Ga2O3 and In2O3 using linear combination of atomic orbital (LCAO) method to discuss the relative nature of bonding. Such LCAO computations have been performed within global hybrid functional namely PBEO

Part of:
Proceedings of the twenty second national symposium on radiation physics: abstract book

Additional details

Publishing Information

Publisher
Jawaharlal Nehru University
Imprint Place
New Delhi (India)
Imprint Title
Proceedings of the twenty second national symposium on radiation physics: abstract book
Imprint Pagination
216 p.
Journal Page Range
p. 116

Conference

Title
22. national symposium on radiation physics
Acronym
NSRP-22
Dates
8-10 Nov 2019
Place
New Delhi (India)

INIS

Country of Publication
India
Country of Input or Organization
India
INIS RN
54050436
Subject category
S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BONDING; ELECTRONIC STRUCTURE; GALLIUM OXIDES; INDIUM OXIDES; MOLECULAR ORBITAL METHOD; MOLECULAR STRUCTURE
Descriptors DEC
CALCULATION METHODS; CHALCOGENIDES; FABRICATION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; JOINING; OXIDES; OXYGEN COMPOUNDS

Optional Information