Published February 18, 2008
| Version v1
Journal article
Epitaxial Ni-Mn-Ga films deposited on SrTiO3 and evidence of magnetically induced reorientation of martensitic variants at room temperature
- 1. IFW Dresden, P.O. Box 270116, 01171 Dresden (Germany)
Description
Epitaxial Ni-Mn-Ga films were grown on SrTiO3 by sputter deposition. The films deposited at 673 K are ferromagnetic and martensitic at room temperature. Pole figure measurements indicate that the twinned orthorhombic martensite microstructure of the film has a lower symmetry compared to bulk. Magnetically induced reorientation or magnetic shape memory effect is indicated by magnetization curve measurements. Though the overall extension of the film is constrained by a rigid substrate, the reorientation is possible due to the additional degree of freedom in the orthorhombic phase
Additional details
Identifiers
- DOI
- 10.1063/1.2883961;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 92
- Journal Issue
- 7
- Journal Page Range
- p. 072502-072502.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39038566
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DEGREES OF FREEDOM; DEPOSITION; EPITAXY; FERROMAGNETIC MATERIALS; FILMS; GALLIUM ALLOYS; LAYERS; MAGNETIZATION; MANGANESE ALLOYS; MARTENSITE; MICROSTRUCTURE; NICKEL ALLOYS; ORTHORHOMBIC LATTICES; SHAPE MEMORY EFFECT; SPUTTERING; STRONTIUM TITANATES; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; ALLOYS; CARBON ADDITIONS; CRYSTAL GROWTH METHODS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; IRON ALLOYS; MAGNETIC MATERIALS; MATERIALS; OXYGEN COMPOUNDS; STRONTIUM COMPOUNDS; TEMPERATURE RANGE; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2008 American Institute of Physics