Evolution of structural and optical properties of nanostructured silicon carbon films deposited by plasma enhanced chemical vapour deposition
- 1. Dipartimento di Scienze Fisiche, Università di Napoli 'Federico II' Complesso Universitario MSA, via Cintia, I-80126 Napoli (Italy)
- 2. SPIN-CNR, Complesso Universitario MSA, via Cintia, I-80126, Napoli (Italy)
- 3. Department of Physics, Utkal University, Bhubaneswar-751004 (India)
- 4. CNISM Unità di Napoli, Complesso Universitario MSA, via Cintia, I-80126, Napoli (Italy)
- 5. Dipartimento di Fisica, Università dell'Aquila, I-67100 Coppito, Aquila (Italy)
Description
Nanostructured silicon carbon films composed of silicon nanocrystallites embedded in hydrogenated amorphous silicon carbon matrix have been deposited by plasma enhanced chemical vapour deposition technique using silane and methane gas mixture highly diluted in hydrogen. The structural and optical properties of the films have been investigated by X-ray diffraction, Raman, Fourier transform infrared, ultra violet-visible-near infrared and photoluminescence spectroscopies while the composition of the films has been obtained from nuclear techniques. The study has demonstrated that the structure of the films evolves from microcrystalline to nanocrystalline phase with the increase in radio frequency (rf) power. Further, it is shown that with increasing the rf power the size of silicon nanocrystallites decreases while the optical gap increases and a blueshift of visible room temperature photoluminescence peak can be observed. - Highlights: ► Nanostructured silicon carbon films show visible photoluminescence at room temperature. ► Optical bandgap, C and H contents are dependent on plasma radiofrequency (rf) power. ► The film structure evolves from micro to nanocrystalline phase with increasing rf power. ► rf power is an effective tool to control the size of Si nanocrystallites.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2012.03.027Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2012.03.027;
- PII
- S0040-6090(12)00286-6;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 520
- Journal Issue
- 15
- Journal Page Range
- p. 4875-4879
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43106292
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALLOYS; CARBON; CHEMICAL VAPOR DEPOSITION; CONTROL; CRYSTALS; FILMS; FOURIER TRANSFORMATION; MATERIALS; NANOSTRUCTURES; OPTICAL PROPERTIES; PEAKS; PHOTOLUMINESCENCE; PLASMA; RADIOWAVE RADIATION; SILANES; SILICON; SPECTROSCOPY; X-RAY DIFFRACTION
- Descriptors DEC
- CHEMICAL COATING; COHERENT SCATTERING; DEPOSITION; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELEMENTS; EMISSION; HYDRIDES; HYDROGEN COMPOUNDS; INTEGRAL TRANSFORMATIONS; LUMINESCENCE; NONMETALS; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; RADIATIONS; SCATTERING; SEMIMETALS; SILICON COMPOUNDS; SURFACE COATING; TRANSFORMATIONS
Optional Information
- Copyright
- Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.