Published May 30, 2003
| Version v1
Journal article
Atomic-scale observation of temperature and pressure driven preroughening and roughening
Creators
- 1. Department of Physics and Astronomy, University of Oklahoma, Norman, Oklahoma 73019 (United States)
- 2. School of NanoSciences and NanoEngineering, University at Albany-SUNY, Albany, New York 12203 (United States)
- 3. Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 (United States)
Description
Preroughening and roughening transitions are observed on the GaAs(001) surface using scanning tunneling microscopy. By tuning the substrate temperature or As4 pressure the surface morphology can be made free of islands, covered with one monolayer high islands or covered with islands on top of islands forming a wedding-cake-type structure. These three distinct surface morphologies are classified as ordered flat (OF), disordered flat (DOF), and rough within the restricted solid-on-solid model. Here, the DOF phase is macroscopically flat; however, an up-down-up-down step pattern persists across the entire surface. Using this model we have determined the next-nearest-neighbor interaction energy to be about 0.05 eV
Additional details
Identifiers
Publishing Information
- Journal Title
- Physical Review Letters
- Journal Volume
- 90
- Journal Issue
- 21
- Journal Page Range
- p. 216109-216109.4
- ISSN
- 0031-9007
- CODEN
- PRLTAO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35046707
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; PHASE STUDIES; PHASE TRANSFORMATIONS; PRESSURE DEPENDENCE; ROUGHNESS; SCANNING TUNNELING MICROSCOPY; SURFACE ENERGY; SURFACES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ENERGY; EPITAXY; FREE ENERGY; GALLIUM COMPOUNDS; MICROSCOPY; PHYSICAL PROPERTIES; PNICTIDES; SURFACE PROPERTIES; THERMODYNAMIC PROPERTIES
Optional Information
- Notes
- (c) 2003 The American Physical Society