Electrophysical properties of planar N+-p junctions formed by doping indium arsenide with sulfur ions

A comparison was made of the electrophysical properties of n-type layers formed by implantation of argon and sulfur ions and indium arsenide. The electrical activity of sulfur implanted in doses of Φ≥5x1014 cm-2 was manifested after annealing at temperatures of at least ∼300 degree C. The utilization coefficient of sulfur ranged from 0.3 to 0.04 for doses in the range 5x1014-1016 cm-2. The implantation of sulfur ions resulted in the formation of planar n+-p junctions in InAs. A study was made of the electrophysical properties of the finished n+-p junctions as a function of temperature. The forward current was found to be a sum of two components: diffusion and recombination. At zero bias the differential resistance Rd measured at 77 K and multiplied by the area of the n+-p junction was 109 Ω·cm2