Self-annealing in ion-implanted silicon

The main features of self-annealing implantation in silicon are treated. Generally, high flux density irradiation could be divided into four steps. There are: 1) accumulation of radiation-induced defects in the crystal matrix; 2) complete or partial amorphization of near surface layer; 3) recrystallization of amorphous layer in further irradiation; 4) formation and stabilization of structural defects in the crystallized layer of the matrix. The peculiarities of implanted atom accumulation kinetics are discussed. The perspective is shown of self-annealing implantation in a few applications. (author)