Published November 10, 2006 | Version v1
Journal article

Strain-Induced Bond Buckling and Its Role in Insulating Properties of Cr-Doped V2O3

  • 1. Department of Physics, Yeshiva University, New York, New York 10016 (United States)
  • 2. Department of Physics, University of Connecticut, Storrs, Connecticut 06269 (United States)
  • 3. Department of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)
  • 4. Department of Physics, Box 351560, University of Washington, Seattle, Washington 98195 (United States)

Description

Structural transformations around both V and Cr atoms in (V1-xCrx)2O3 across its metal-insulator transition (MIT) at x∼0.01 are studied by extended x-ray absorption fine-structure technique. Our new results for Cr made possible by the use of a novel x-ray analyzer that we developed reveal the substitutional mechanism of Cr doping. We find that this system has a buckled structure with short Cr-V and long V-V bonds. This system of bonds is disordered around the average trigonal lattice ascertained by x-ray diffraction. Such local distortions can result in a long range strain field that sets in around dilute Cr atoms in microscopic regions. We suggest that such locally strained regions should be insulating even at small x. The possibility of local insulating regions within a metallic phase, first suggested by Rice and Brinkman in 1972, remains unaccounted for in modern MIT theories

Additional details

Publishing Information

Journal Title
Physical Review Letters
Journal Volume
97
Journal Issue
19
Journal Page Range
p. 195502-195502.4
ISSN
0031-9007
CODEN
PRLTAO

Optional Information

Notes
(c) 2006 The American Physical Society