Published October 20, 2014 | Version v1
Journal article

Qualifying composition dependent p and n self-doping in CH3NH3PbI3

  • 1. Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0656 (United States)
  • 2. Hunan Key Laboratory for Super-microstructure and Ultrafast Process, College of Physics and Electronics, Central South University, Changsha 410083 (China)
  • 3. Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States)

Description

We report the observation of self-doping in perovskite. CH3NH3PbI3 was found to be either n- or p-doped by changing the ratio of methylammonium halide (MAI) and lead iodine (PbI2) which are the two precursors for perovskite formation. MAI-rich and PbI2-rich perovskite films are p and n self-doped, respectively. Thermal annealing can convert the p-type perovskite to n-type by removing MAI. The carrier concentration varied as much as six orders of magnitude. A clear correlation between doping level and device performance was also observed.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
105
Journal Issue
16
Journal Page Range
p. 163508-163508.5
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
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