Published November 2002
| Version v1
Journal article
Deep UV laser induced luminescence in oxide thin films
- 1. Fraunhofer Institut fuer Angewandte Optik und Feinmechanik, Jena (Germany)
- 2. Institut fuer Physikalische Hochtechnologie e.V. Jena (Germany)
- 3. Southwall Europe GmbH, Grossroehrsdorf (Germany)
Description
Time-resolved luminescence experiments have been set up in order to study the interaction of 193-nm laser radiation with dielectric thin films. At room temperature, Al2O3 coatings show photoluminescence upon ArF excimer laser irradiation, with significant intensity contributions besides the known substrate emission. Time- and energy-resolved measurements indicate the presence of oxygen-defect centers in Al2O3 coatings, which suggests a strong single-photon interaction at 193 nm by F+ and F center absorption. Measurements on highly reflective thin-film stacks, consisting of quarter-wave Al2O3 and SiO2 layers, indicate similar UV excitations, mainly from color centers of Al2O3. (orig.)
Additional details
Publishing Information
- Journal Title
- Applied Physics. A, Materials Science and Processing
- Journal Volume
- 75
- Journal Issue
- 5
- Journal Page Range
- p. 637-640
- ISSN
- 0947-8396
- CODEN
- APAMFC
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 33043757
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ALUMINIUM OXIDES; DIELECTRIC MATERIALS; EMISSION SPECTRA; EXPERIMENTAL DATA; FAR ULTRAVIOLET RADIATION; LASER RADIATION; PHOTOLUMINESCENCE; SILICON OXIDES; THIN FILMS; ULTRAVIOLET SPECTRA; VISIBLE SPECTRA
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; DATA; ELECTROMAGNETIC RADIATION; EMISSION; FILMS; INFORMATION; LUMINESCENCE; MATERIALS; NUMERICAL DATA; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; RADIATIONS; SILICON COMPOUNDS; SPECTRA; ULTRAVIOLET RADIATION
Optional Information
- Notes
- 35 refs.