Published June 1, 1988
| Version v1
Journal article
Investigation of (Ga,In) (As,P)/InP single heterostructures by means of extremely asymmetrical Bragg diffraction using synchrotron radiation
Creators
- 1. Karl-Marx-Universitaet, Leipzig (German Democratic Republic)
- 2. Kernforschungsanlage Juelich G.m.b.H. (Germany, F.R.). Inst. fuer Festkoerperforschung
Description
Synchrotron radiation was used to measure the rocking curves from (Ga, In) (As, P) single layers grown on an InP (100) oriented substrate. The incident angle was varied (changing correspondingly the X-ray incident-beam wavelength) in order to measure at extremely asymmetrical Bragg diffraction down to a glancing angle of 0.350. The measured rocking curves could be interpreted by the semi-kinematic model of Petrashen with corrections for X-ray refraction and for the width of the rocking curve from the extended dynamical theory. (orig.)
Additional details
Publishing Information
- Journal Title
- J. Appl. Crystallogr.
- Journal Volume
- 21
- Journal Issue
- 3
- Series
- J. Appl. Crystallogr.
- Journal Page Range
- 240-244
- ISSN
- 0021-8898
- CODEN
- JACGA
INIS
- Country of Publication
- Denmark
- Country of Input or Organization
- Denmark
- INIS RN
- 19096798
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ASYMMETRY; BRAGG REFLECTION; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM PHOSPHIDES; LAYERS; SUBSTRATES; SYNCHROTRON RADIATION; X-RAY DIFFRACTION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BREMSSTRAHLUNG; COHERENT SCATTERING; DIFFRACTION; ELECTROMAGNETIC RADIATION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; RADIATIONS; REFLECTION; SCATTERING; SEMICONDUCTOR JUNCTIONS