Determination of shallow core level spectra in selected compound semiconductors

Core level spectra of the M shells of Ga, Ge, As, and Se and of the L shell of S have been obtained from X-ray photoemission measurements on GaAs, GeSe, and GeS. Broadening contributions from the achromatic source, the analyzer momentum window, and the extrinsic losses experienced by the photoemitted electrons in traversing the solid, as well as satellite lines due to Kα3sub(,)4 emission, are removed by deconvolution of the data with a measured electron backscatter spectrum convoluted with a source function. The results are compared with theory where available. (orig.)