Published August 11, 1997
| Version v1
Journal article
The influence of high-energy electron irradiation and boron implantation on the oxide thickness in the SiO2/Si system
Creators
- 1. Institute of Metal Physics, Russian Academy of Sciences - Ural Division, 620219 Yekaterinburg GSP-170 (Russian Federation)
- 2. Institute of Solid State Physics, Bulgarian Academy of Sciences, Boulevard Trakia 72, Sofia 1784 (Bulgaria)
Description
The SiO2/Si system exposed to irradiation with 11-12 MeV electrons was studied by soft-x-ray emission spectroscopy using the variable-exciting-electron-energy, optical ellipsometry, and nuclear reaction techniques. For the SiO2/Si system prepared on an n-substrate, oxidation of Si was observed, and the thickness of the SiO2 layer after electron irradiation was estimated. For the SiO2/Si system prepared on a p-Si substrate, irradiation-induced oxidation was not observed. It was found that preliminary boron implantation in the SiO2/n-Si system blocks oxidation of the n-Si substrate exposed to electron irradiation. (author)
Availability note (English)
Available online at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/Additional details
Identifiers
- URL
- http://www.iop.org/;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 9
- Journal Issue
- 32
- Journal Page Range
- p. 6969-6978
- ISSN
- 0953-8984
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- Colombia
- INIS RN
- 32018154
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BORON; ELECTRON EMISSION; IRRADIATION; NUCLEAR REACTIONS; OPTICAL MODELS; OXIDATION; OXIDES; SILICON; SILICON OXIDES; SPECTROSCOPY; X-RAY LASERS
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL REACTIONS; ELEMENTS; EMISSION; LASERS; MATHEMATICAL MODELS; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS