Published September 1, 2018 | Version v1
Journal article Metadata-only

Characteristics of Sb6Te4/VO2 Multilayer Thin Films for Good Stability and Ultrafast Speed Applied in Phase Change Memory

Creators

  • 1. School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213000 (China)
  • 2. State Key Laboratory of Optoelectronic Materials and Technology, School of Physics, Sun Yat-Sen University, Guangzhou 510275 (China)

Description

The Sb 6 Te 4/VO 2 multilayer thin films are prepared by magnetron sputtering and the potential application in phase change memory is investigated in detail. Compared with Sb 6 Te 4, Sb 6 Te 4/VO 2 multilayer composite thin films have higher phase change temperature and crystallization resistance, indicating better thermal stability and less power consumption. Also, Sb 6 Te 4/VO 2 has a broader energy band of 1.58 eV and better data retention (125°C for 10 y). The crystallization is suppressed by the multilayer interfaces in Sb 6 Te 4/VO 2 thin film with a smaller rms surface roughness for Sb 6 Te 4/VO 2 than monolayer Sb 4 Te 6. The picosecond laser technology is applied to study the phase change speed. A short crystallization time of 5.21 ns is realized for the Sb 6 Te 4 (2 nm)/VO 2 (8 nm) thin film. The Sb 6 Te 4/VO 2 multilayer thin film is a potential and competitive phase change material for its good thermal stability and fast phase change speed. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/35/9/096801

Additional details

Identifiers

DOI
10.1088/0256-307X/35/9/096801;

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
35
Journal Issue
9
Journal Page Range
[4 p.]
ISSN
0256-307X
CODEN
CPLEEU

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52046397
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANTIMONY COMPOUNDS; BINARY ALLOY SYSTEMS; COMPARATIVE EVALUATIONS; CRYSTALLIZATION; LASER RADIATION; LAYERS; MAGNETRONS; PHASE CHANGE MATERIALS; ROUGHNESS; SPUTTERING; TELLURIUM COMPOUNDS; THIN FILMS; VANADIUM OXIDES
Descriptors DEC
ALLOY SYSTEMS; CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; EVALUATION; FILMS; MATERIALS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; RADIATIONS; SURFACE PROPERTIES; TRANSITION ELEMENT COMPOUNDS; VANADIUM COMPOUNDS