Published 1994
| Version v1
Book
SEU error rates in advanced digital CMOS
Creators
- 1. Vanderbilt Univ., Nashville, TN (United States)
Description
Space-based electronics is exposed to cosmic radiations that result in bit reversal errors or Single Event Upsets. Those errors are generally taken into account through an error-rate quantification expressed in Expected errors per Bit-Day (EBD). A procedure to evaluate this EBD for CMOS memory devices is presented here and applied to a typical data set. This method arises from a development of the upset rate convolution integral. It can be applied to ground-based test data, and provide a realistic upset-rate estimate for space flight conditions. (D.L.). 20 refs., 7 figs
Additional details
Publishing Information
- Publisher
- Commissariat a l'Energie Atomique.
- Imprint Place
- Bruyeres-le-Chatel (France)
- Imprint Title
- Radiation and its effects on components and systems
- Imprint Pagination
- 596 p.
- Journal Page Range
- p. 546-553.
Conference
- Title
- 2. European Conference on Radiation and its Effects on Components and Systems.
- Dates
- 13-16 Sep 1993.
- Place
- Saint-Malo (France).
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 27008827
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- ANGULAR DISTRIBUTION; C CODES; COMPUTERIZED SIMULATION; DIFFERENTIAL CROSS SECTIONS; ERRORS; LET; MOS TRANSISTORS; POST-IRRADIATION EXAMINATION; RADIATION HARDENING; SEMICONDUCTOR STORAGE DEVICES; SPACE VEHICLES; STATISTICAL DATA; TOLERANCE
- Descriptors DEC
- COMPUTER CODES; CROSS SECTIONS; DATA; DISTRIBUTION; ENERGY TRANSFER; HARDENING; INFORMATION; MEMORY DEVICES; NUMERICAL DATA; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SIMULATION; TRANSISTORS; VEHICLES