Published May 2008
| Version v1
Journal article
Extrinsic conductivity of Hg3In2Te6 single crystals
- 1. Chernivtsi National University (Ukraine)
- 2. Ukrainian National University of Water Industry and Nature Management (Ukraine)
Description
n-Hg3In2Te6 single crystals with resistivity of 1-2 Ω cm used in photodiodes for the wavelength 1.55 μm are studied. It is shown that electrical conductivity of the material is controlled by donors of two types with ionization energies of 0.063 and 0.18 eV, while the mobility of charge carriers is predominantly controlled by scattering at charged centers. On the basis of the electroneutrality equation, a quantitative description of the observed temperature dependence of the electron concentration in the temperature range from 100 to 370 K is obtained
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 42
- Journal Issue
- 5
- Journal Page Range
- p. 514-517
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39097953
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CARRIER MOBILITY; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; INDIUM COMPOUNDS; IONIZATION; MERCURY COMPOUNDS; MILLI EV RANGE; MONOCRYSTALS; PHOTODIODES; TELLURIDES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K
- Descriptors DEC
- CHALCOGENIDES; CRYSTALS; ELECTRICAL PROPERTIES; ENERGY RANGE; MOBILITY; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2008 Pleiades Publishing, Ltd.