Gas sensitivity and point defects in sonochemically grown ZnO nanowires
- 1. Chungnam National University, Daejeon (Korea, Republic of)
Description
We fabricated ZnO nanowires on pre-patterned alumina substrates by using a sonochemical method with Zn(NO3)2 and ZnCl4 precursors, and we studied the optical and the gas sensing properties with thermal treatment for these samples. The yellow emission was found to be decreased with thermal annealing, and the gas response time was reduced with annealing. The NO gas sensitivity of the sample made using ZnCl4 precursors was almost independent of the sensing temperature whereas a significant decrease in the yellow emission was observed with thermal annealing. This can be explained if the oxygen interstitials responsible for the yellow emission do not influence the affinity of the gas molecules significantly because they are located inside the nanowires.
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 60
- Journal Issue
- 3
- Series
- 22 refs, 4 figs
- Journal Page Range
- p. 415-419
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 45032995
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DEFECTS; GASES; GRAIN GROWTH; NANOSTRUCTURES; NITROGEN OXIDES; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SENSITIVITY; TRANSMISSION ELECTRON MICROSCOPY; WIRES; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTRON MICROSCOPY; EMISSION; FLUIDS; LUMINESCENCE; MATERIALS; MICROSCOPY; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; ZINC COMPOUNDS