Published November 1987
| Version v1
Miscellaneous
Anomalous diffusion of indium in Al2O3 amorphised by ion implantation
Creators
- 1. Royal Melbourne Inst. of Tech. (Australia). Microelectronics Technology Centre
Description
The diffusion of indium in α-axis sapphire amorphised with high dose In implantation was studied. During isothermal annealing at 600 deg C, diffusion behaviour was strongly dependent on dose. For dose of 6x1016In/cm2, implanted layer still remained amorphous, the indium profile broadened, and there was a long diffusion tail into underlying crystal. For lower dose of 1x1016 and 3x1016In/cm2 no such diffusion was observed
Additional details
Publishing Information
- Publisher
- AINSE.
- Imprint Place
- Lucas Heights (Australia)
- Imprint Title
- Fifth Australian conference on nuclear techniques of analysis : proceedings
- Imprint Pagination
- 266 p.
- Journal Page Range
- p. 193-195.
- Report number
- INIS-mf--11495
Conference
- Title
- 5. Australian conference on nuclear techniques of analysis.
- Dates
- 4-6 Nov 1987.
- Place
- Lucas Heights (Australia).
INIS
- Country of Publication
- Australia
- Country of Input or Organization
- Australia
- INIS RN
- 20059727
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMORPHOUS STATE; IMPURITIES; ION IMPLANTATION; SAPPHIRE
- Descriptors DEC
- CORUNDUM; MINERALS; OXIDE MINERALS