Published October 27, 2014 | Version v1
Journal article

Raman scattering in conducting metal-organic films deposited on nanoporous anodic alumina

  • 1. Belarusian State University, 4 Nezavisimosti Ave., Minsk 220030 (Belarus)
  • 2. Belarusian State University of Informatics and Radioelectronics, 6 P.Brovki Str, Minsk 220013 (Belarus)

Description

Raman scattering in dielectric nanostructures on the base of aluminum oxide was studied. A method of high dielectric nanocomposite fabrication was proposed. Metal- containing conducting Langmuir – Blodgett films were shown to shield the anodic nanoporous alumina from the action of strong electrical fields

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/541/1/012070

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
541
Journal Issue
1
Journal Page Range
[5 p.]
ISSN
1742-6596

Conference

Title
1. international school and conference on optoelectronics, photonics, engineering and nanostructures
Acronym
OPEN 2014
Dates
25-27 Mar 2014
Place
St Petersburg (Russian Federation)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46082589
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM; ALUMINIUM OXIDES; COMPOSITE MATERIALS; DIELECTRIC MATERIALS; ELECTRIC FIELDS; FABRICATION; NANOSTRUCTURES; ORGANOMETALLIC COMPOUNDS; RAMAN EFFECT; THIN FILMS
Descriptors DEC
ALUMINIUM COMPOUNDS; CHALCOGENIDES; ELEMENTS; FILMS; MATERIALS; METALS; ORGANIC COMPOUNDS; OXIDES; OXYGEN COMPOUNDS