Published October 27, 2014
| Version v1
Journal article
Raman scattering in conducting metal-organic films deposited on nanoporous anodic alumina
- 1. Belarusian State University, 4 Nezavisimosti Ave., Minsk 220030 (Belarus)
- 2. Belarusian State University of Informatics and Radioelectronics, 6 P.Brovki Str, Minsk 220013 (Belarus)
Description
Raman scattering in dielectric nanostructures on the base of aluminum oxide was studied. A method of high dielectric nanocomposite fabrication was proposed. Metal- containing conducting Langmuir – Blodgett films were shown to shield the anodic nanoporous alumina from the action of strong electrical fields
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/541/1/012070Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 541
- Journal Issue
- 1
- Journal Page Range
- [5 p.]
- ISSN
- 1742-6596
Conference
- Title
- 1. international school and conference on optoelectronics, photonics, engineering and nanostructures
- Acronym
- OPEN 2014
- Dates
- 25-27 Mar 2014
- Place
- St Petersburg (Russian Federation)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46082589
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM; ALUMINIUM OXIDES; COMPOSITE MATERIALS; DIELECTRIC MATERIALS; ELECTRIC FIELDS; FABRICATION; NANOSTRUCTURES; ORGANOMETALLIC COMPOUNDS; RAMAN EFFECT; THIN FILMS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; ELEMENTS; FILMS; MATERIALS; METALS; ORGANIC COMPOUNDS; OXIDES; OXYGEN COMPOUNDS