Electrical properties of Se2Sb2Te6 thin films

The electrical properties of Se2Sb2Te6 thin films are investigated using dc resistance, impedance spectroscopy and capacitance-voltage (C-V) measurements. The amorphous-crystalline transition temperature, Tc, is estimated to be 60 deg. C using dc resistance measurements. The impedance spectroscopy measurements are performed at different temperatures ranging from 25 to 95 deg. C. The impedance spectroscopy data give an estimation of the activation energy, Ev = 0.5 eV. The amorphous-crystalline interface is electrically characterized by measuring the capacitance of the film as a function of bias voltage at different temperatures ranging from 25 to 85 deg. C. The C-V measurements show temperature dependence and nonlinear behaviour of the capacitance with the applied bias voltages that could be attributed to the crystallization growth as the temperature gets close to Tc.