Synthesis and characterization of InGaAs nanowires grown by MOCVD

Semiconductor nanowires have been intensively investigated in order to study their unique fundamental and application properties that develop at the nano-scale. One of main problems in the growth of III-V semiconductor nanowire is uniformity both of in dimension and composition of chemical elements. We synthesized InGaAs nanowire on GaAs (111) substrate at 400 °C – 480 °C temperatures for 30 minutes using MOCVD. The nanowires grow perpendicular to the substrate via direct impinging mechanism and they have hexagonal shape with diameter of 80-150 nm. Dimension of nanowire, length and diameter, increase with increases of growth temperature. Formations of tapering could be controlled with growth at lower temperature.