Dislocation junctions and jogs in a free-standing FCC thin film
- 1. Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305-4034 (United States)
- 2. Department of Mechanical Engineering, Stanford University, Stanford, CA 94305-4040 (United States)
Description
Dislocation junctions and jogs in a free-standing FCC thin film have been studied using three-dimensional dislocation dynamics simulations. Due to the unconstrained motion of surface nodes and dislocation annihilation at the free surface, junctions and jogs are unstable except for some uncommon conditions. If the film is thin enough for a significant portion of the dislocation network to be terminated at the free surface, junctions and jogs can exist for only a finite time during deformation. Thus, the creation of junction/jog-related dislocation sources and their performance are more limited as the film thickness decreases. This effect could lead to insufficient dislocation multiplication to balance dislocation annihilation at the free surface
Availability note (English)
Available from http://dx.doi.org/10.1088/0965-0393/19/2/025002Additional details
Identifiers
- DOI
- 10.1088/0965-0393/19/2/025002;
- PII
- S0965-0393(11)67294-X;
Publishing Information
- Journal Title
- Modelling and Simulation in Materials Science and Engineering
- Journal Volume
- 19
- Journal Issue
- 2
- Journal Page Range
- [14 p.]
- ISSN
- 0965-0393
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45005046
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CONNECTORS; DEFORMATION; DISLOCATIONS; ELECTRIC CONTACTS; FCC LATTICES; SIMULATION; SURFACES; THICKNESS; THIN FILMS
- Descriptors DEC
- CONDUCTOR DEVICES; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; CUBIC LATTICES; DIMENSIONS; ELECTRICAL EQUIPMENT; EQUIPMENT; FILMS; LINE DEFECTS