Published March 2011 | Version v1
Journal article

Dislocation junctions and jogs in a free-standing FCC thin film

  • 1. Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305-4034 (United States)
  • 2. Department of Mechanical Engineering, Stanford University, Stanford, CA 94305-4040 (United States)

Description

Dislocation junctions and jogs in a free-standing FCC thin film have been studied using three-dimensional dislocation dynamics simulations. Due to the unconstrained motion of surface nodes and dislocation annihilation at the free surface, junctions and jogs are unstable except for some uncommon conditions. If the film is thin enough for a significant portion of the dislocation network to be terminated at the free surface, junctions and jogs can exist for only a finite time during deformation. Thus, the creation of junction/jog-related dislocation sources and their performance are more limited as the film thickness decreases. This effect could lead to insufficient dislocation multiplication to balance dislocation annihilation at the free surface

Availability note (English)

Available from http://dx.doi.org/10.1088/0965-0393/19/2/025002

Additional details

Identifiers

DOI
10.1088/0965-0393/19/2/025002;
PII
S0965-0393(11)67294-X;

Publishing Information

Journal Title
Modelling and Simulation in Materials Science and Engineering
Journal Volume
19
Journal Issue
2
Journal Page Range
[14 p.]
ISSN
0965-0393

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45005046
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CONNECTORS; DEFORMATION; DISLOCATIONS; ELECTRIC CONTACTS; FCC LATTICES; SIMULATION; SURFACES; THICKNESS; THIN FILMS
Descriptors DEC
CONDUCTOR DEVICES; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; CUBIC LATTICES; DIMENSIONS; ELECTRICAL EQUIPMENT; EQUIPMENT; FILMS; LINE DEFECTS