Published 1985
| Version v1
Journal article
A novel annealing technique in Si implanted InP with phosphosilicate glass encapsulation
Creators
- 1. Oki Electric Industry Co. Ltd., Higashi-Asakawa, Hachioji, Tokyo (Japan)
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Hosei Daigaku Ion Bimu Kagaku Kenkyusho Hokoku
- Journal Issue
- suppl.4
- Series
- Hosei Daigaku Ion Bimu Kagaku Kenkyusho Hokoku.
- ISSN
- 0286-0201
- CODEN
- HDIHD
Conference
- Title
- 3. symposium on ion beam technology, Hosei University. Ion beam analysis.
- Dates
- 7-8 Dec 1984.
- Place
- Koganei, Tokyo (Japan).
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 17018022
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ANNEALING; ENCAPSULATION; ENERGY SPECTRA; GLASS; INDIUM PHOSPHIDES; ION IMPLANTATION; PHOTOLUMINESCENCE; RAMAN EFFECT; SILICATES; SILICON IONS; SPUTTERING; SUBSTRATES; VACANCIES
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; EMISSION; HEAT TREATMENTS; INDIUM COMPOUNDS; IONS; LUMINESCENCE; OXYGEN COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; POINT DEFECTS; SILICON COMPOUNDS; SPECTRA
Optional Information
- Notes
- Published in summary form only.