Published August 1, 2006 | Version v1
Journal article

Synthesis and field emission property of SiCN cone arrays

  • 1. Nano-center, Department of Physics, East China Normal University, 3663 North Zhongshan Rd., Shanghai 200062 (China)
  • 2. Department of Chemistry, Tsinghua University, Beijing 100084 (China)

Description

Silicon carbon nitride (SiCN) cone arrays were synthesized on Si wafers using a microwave plasma chemical vapor deposition reactor with gas mixtures of CH4, SiH4, Ar, H2 and N2 as precursors. The SiCN cones have nanometer-sized tips and their roots vary from nanometers to micrometers in sizes. A lowest turn-on field of 0.6 V μm-1 as well as field emission current densities of 4.7 mA cm-2 at an applied field of 2.8 V μm-1 was obtained from these SiCN cones. Moreover, the SiCN cone arrays exhibited rather stable emission current under constant applied voltage

Additional details

Identifiers

DOI
10.1016/j.matchemphys.2005.09.072;
PII
S0254-0584(05)00716-9;

Publishing Information

Journal Title
Materials Chemistry and Physics
Journal Volume
98
Journal Issue
2-3
Journal Page Range
p. 500-503
ISSN
0254-0584
CODEN
MCHPDR

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.