Published January 2009
| Version v1
Report
Compound semiconductor InSb crystal growth and its estimation for the substrate of radiation detectors
- 1. Kyoto Univ., Graduate School of Engineering, Kyoto (Japan)
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Radiation detectors and their uses. Proceedings of the 22nd workshop on radiation detectors and their uses
- Imprint Pagination
- 186 p.
- Journal Page Range
- p. 86-90
- Report number
- KEK-PROC--2008-14
Conference
- Title
- 22. workshop on radiation detectors and their uses
- Dates
- 5-7 Feb 2008
- Place
- Tsukuba, Ibaraki (Japan)
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 41095150
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature, No Abstract
- Descriptors DEI
- ABSORPTION; BRIDGMAN METHOD; CARRIER DENSITY; CRYSTAL GROWTH; EFFICIENCY; ELECTRIC CONDUCTIVITY; ENERGY RESOLUTION; HALL EFFECT; INSB SEMICONDUCTOR DETECTORS; MOBILITY; PHOTONS; ZONE MELTING
- Descriptors DEC
- BOSONS; CRYSTAL GROWTH METHODS; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; MASSLESS PARTICLES; MEASURING INSTRUMENTS; MELTING; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; RADIATION DETECTORS; RESOLUTION; SEMICONDUCTOR DETECTORS; SORPTION
Optional Information
- Notes
- 3 refs., 9 figs., 1 tab.