Published 1995
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The effects of defects introduced during sputter-deposition of Schottky contacts to GaAs on their rectification characteristics
- 1. Pretoria Univ. (South Africa). Dept. of Physics
Description
Short communication
Files
28080505.pdf
Files
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Additional details
Publishing Information
- Publisher
- Accademic Press.
- Imprint Title
- Ninth international conference on ion beam modification of materials. Book of abstracts
- Imprint Pagination
- 452 p.
- Journal Page Range
- p. 10068.
- Report number
- INIS-AU--0004
Conference
- Title
- 9. international conference on ion beam modification of materials.
- Acronym
- IBMM'95
- Dates
- 5-10 Feb 1995.
- Place
- Canberra (Australia).
INIS
- Country of Publication
- Australia
- Country of Input or Organization
- Australia
- INIS RN
- 28080505
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CRYSTAL DEFECTS; GALLIUM ARSENIDES; PHYSICAL RADIATION EFFECTS; SCHOTTKY BARRIER DIODES; SPUTTERING; STRUCTURAL CHEMICAL ANALYSIS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; GALLIUM COMPOUNDS; PNICTIDES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES