Formation of Al-Fe-V-Si amorphous thin films by Ar+ implantation

The formation of amorphous films of the high temperature aluminium alloy Al(93.3)Fe(4.3)V(0.7)Si(1.7) at %, by argon ion implantation is reported. Polycrystalline films of thickness 200 nm were vacuum evaporated on to two types of substrate: monocrystal NaCl and SiO2 glass. Ion implantation with 22 KeV argon ions at a current density of 5μAcm-2 was carried out at room temperature. The dependence of the electrical resistance of the films on implantation time was examined and an analysis of the amorphization process attempted. The results showed that ion implantation induced amorphization is a continuous, dose dependent, process. (UK)