Published October 2003
| Version v1
Journal article
Charge-buildup effect during ion-beam irradiation of an insulator and its suppression by deposition of a thin metal film
Creators
- 1. Korea Institute of Geoscience and Mineral Resources, Daejeon (Korea, Republic of)
Description
During ion-beam irradiation, an electric potential is induced on the surface of an insulator sample owing to electric charge buildup. Because this uncontrollable built-up voltage causes energy fluctuations of the incoming ions and the exiting charged particles, the uncertainty in ion-beam analyses, such as Rutherford backscattering spectrometry and elastic recoil detection increases. In order to suppress the charge buildup effect, we deposited a thin gold film on the sample surface. Using a He beam, we measured the built-up voltage at the insulator surface as a function of the Au film thickness. We determined the minimum thickness necessary to suppress such an effect for several insulators samples.
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 43
- Journal Issue
- 4
- Series
- 10 refs, 3 figs, 1 tab
- Journal Page Range
- p. 582-584
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 41048385
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DEPOSITION; ELASTIC SCATTERING; ELECTRICAL INSULATORS; HELIUM 2; ION BEAMS; IRRADIATION; RECOILS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON OXIDES; THICKNESS; THIN FILMS
- Descriptors DEC
- BEAMS; CHALCOGENIDES; DIMENSIONS; ELECTRICAL EQUIPMENT; EQUIPMENT; EVEN-EVEN NUCLEI; FILMS; HELIUM ISOTOPES; ISOTOPES; LIGHT NUCLEI; NUCLEI; OXIDES; OXYGEN COMPOUNDS; SCATTERING; SILICON COMPOUNDS; SPECTROSCOPY