Published February 1999
| Version v1
Journal article
Scanned potential microscopy of edge and bulk currents in the quantum Hall regime
Creators
- 1. Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
- 2. Department of Physics, University of California, Berkeley, California 94720 (United States)
- 3. Department of Electrical Engineering, Stanford University, Stanford, California 94309 (United States)
Description
Using an atomic force microscope as a local voltmeter, we measure the Hall voltage profile in a two-dimensional electron gas in the quantum Hall (QH) regime. We observe a linear profile in the bulk of the sample in the transition regions between QH plateaus and a distinctly nonlinear profile on the plateaus. In addition, localized voltage drops are observed at the sample edges in the transition regions. We interpret these results in terms of theories of edge and bulk current in the QH regime. copyright 1999 The American Physical Society
Additional details
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter
- Journal Volume
- 59
- Journal Issue
- 7
- Journal Page Range
- p. 4654-4657
- ISSN
- 0163-1829
- CODEN
- PRBMDO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 30021647
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELECTRIC CURRENTS; ELECTRON GAS; HALL EFFECT; MICROSCOPY; VOLTAGE DROP
- Descriptors DEC
- CURRENTS