Published February 1999 | Version v1
Journal article

Scanned potential microscopy of edge and bulk currents in the quantum Hall regime

  • 1. Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
  • 2. Department of Physics, University of California, Berkeley, California 94720 (United States)
  • 3. Department of Electrical Engineering, Stanford University, Stanford, California 94309 (United States)

Description

Using an atomic force microscope as a local voltmeter, we measure the Hall voltage profile in a two-dimensional electron gas in the quantum Hall (QH) regime. We observe a linear profile in the bulk of the sample in the transition regions between QH plateaus and a distinctly nonlinear profile on the plateaus. In addition, localized voltage drops are observed at the sample edges in the transition regions. We interpret these results in terms of theories of edge and bulk current in the QH regime. copyright 1999 The American Physical Society

Additional details

Publishing Information

Journal Title
Physical Review. B, Condensed Matter
Journal Volume
59
Journal Issue
7
Journal Page Range
p. 4654-4657
ISSN
0163-1829
CODEN
PRBMDO

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
30021647
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ELECTRIC CURRENTS; ELECTRON GAS; HALL EFFECT; MICROSCOPY; VOLTAGE DROP
Descriptors DEC
CURRENTS