Published October 15, 2006
| Version v1
Journal article
Structures of the As-deficient phase on GaAs(001)-(2x4)
Creators
- 1. National Institute for Materials Science (NIMS), Tsukuba 305-0044 (Japan)
Description
The atomic structures of the GaAs(001)-(2x4) surface have been studied using scanning tunneling microscopy (STM), reflectance difference spectroscopy (RDS), and reflection high-energy electron diffraction (RHEED). While STM images from the β phase show well-ordered β2 structures, the α phase consists of (2x4) structures with surface As dimers locally missing from the basic β2(2x4) units. Our RDS and RHEED analyses, together with STM observations, clearly show that the missing-dimer defect has local atomic geometry identical to the α2(2x4) structure
Additional details
Identifiers
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter and Materials Physics
- Journal Volume
- 74
- Journal Issue
- 16
- Journal Page Range
- p. 165322-165322.4
- ISSN
- 1098-0121
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38026767
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL DEFECTS; DIMERS; ELECTRON DIFFRACTION; GALLIUM ARSENIDES; GEOMETRY; REFLECTION; REFLECTIVITY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; SURFACES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL STRUCTURE; DIFFRACTION; GALLIUM COMPOUNDS; MATERIALS; MATHEMATICS; MICROSCOPY; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; PNICTIDES; SCATTERING; SURFACE PROPERTIES
Optional Information
- Notes
- (c) 2006 The American Physical Society