Study of vacuum deposition of CdS and (Cd sub(x) Zn sub(1-x))S layers
Creators
- 1. Instituto Militar de Engenharia, Rio de Janeiro (Brazil). Secao de Engenharia e Ciencia dos Materiais
Description
(Cd sub(x) Zn sub(1-x))S films of 20-25 μm thicknesses were deposited by simultaneous evaporation of CdS and ZnS, using the hot walls technique. The temperatures of 2000C, 4000C, 900-10000C and 900-12000C for the substrates, walls, CdS source and ZnS source, respectively, were the most adequate for formation of films with deposition rates around 0.5 μm.min-1. Films with Wurtzite structure were obtained and their crystallographic planes were oriented towards (001) direction. Measurements of Hall voltage showed resistivity, concentration and mobility in the range of 2.5 Ω.cm, 1018 cm-3 and 24 cm2. V-1.s-1, respectively. The energy of 2.38 eV for the CdS forbidden band was obtained by measuring optical absorption. Modifications in the evaporation system are discussed so they may helps solving problems which occurred during film formation. (C.L.B.)
Abstract (Portuguese)
Filmes de (Cd sub(x) Zn sub(1-x))S de 20-25 μm de espessura foram depositados pela evaporacao simultanea de CdS e ZnS, utilizando a tecnica de paredes quentes. As temperaturas de 2000C, 4000C, 900-10000C e 900-12000C para os substratos, paredes, fonte de CdS e fonte de ZnS, respectivamente, foram as mais adequadas para a formacao de filmes com taxas de deposicao em torno de 0,5 μm.min-1. Obteve-se filmes com estrutura Wurtizita, com os planos cristalograficos orientados segundo a direcao (001). Medidas de voltagen Hall mostraram resistividade, concentracao e mobilidade na faixa de 2,5 Ω.cm, 1018 cm- e 24 cm2.V-1.s-1, respectivamente, enquanto a energia de 2,38 eV para a banda proibida do CdS foi obtida atraves da medida de absorcao otica. Sao discutidas modificacoes no sistema de evaporacao para solucao de problemas surgidos durante a formacao dos filmes. (Autor)Additional details
Additional titles
- Original title (Portuguese)
- Estudo de deposicao a vacuo das camadas de CdS e (Cd sub(x) Zn sub(1-x)) S
Publishing Information
- Journal Title
- Rev. Bras. Apl. Vacuo
- Journal Volume
- 3
- Journal Issue
- 1-2
- Series
- Rev. Bras. Apl. Vacuo.
- Journal Page Range
- 201-212
- ISSN
- 0101-7659
Conference
- Title
- 4. Brazilian Congress of Vacuum Applications in the Industry and in the Science.
- Dates
- 18-20 Jul 1983.
- Place
- Sao Jose dos Campos, SP (Brazil).
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 16016877
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DIAGRAMS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; IMAGES; MOBILITY; OPTICAL PROPERTIES; SOLAR CELLS; SULFIDES; TEMPERATURE DEPENDENCE; VACUUM COATING
- Descriptors DEC
- CHALCOGENIDES; DEPOSITION; DIRECT ENERGY CONVERTERS; ELECTRICAL PROPERTIES; ELECTRONIC EQUIPMENT; EQUIPMENT; INFORMATION; PHYSICAL PROPERTIES; SULFUR COMPOUNDS; SURFACE COATING