Published July 1, 2018
| Version v1
Journal article
First-principles study of atom doping
Creators
- 1. Xi'an High-tech Research Institute, Xian 710025 China (China)
Description
The crystal structures of H, N, O and He atoms in Al metal are studied by using the first-principles calculation method based on the density functional theory. The site occupations of H, O, N and He atoms at the interstitials of the Al lattice are discussed by means of crystal structure and formation energy, and the electronic structures of Al are analyzed by density of states, charge density and charge population. The results show that H, O and N atoms are in the tetrahedral interstice, whereas He atom is more stable in the octahedral interstice of Al metal. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1757-899X/394/2/022003Additional details
Identifiers
Publishing Information
- Journal Title
- IOP Conference Series. Materials Science and Engineering (Online)
- Journal Volume
- 394
- Journal Issue
- 2
- Journal Page Range
- [3 p.]
- ISSN
- 1757-899X
Conference
- Title
- 5. International Conference on Advanced Composite Materials and Manufacturing Engineering
- Dates
- 16-17 Jun 2018
- Place
- Xishuangbanna (China)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52094153
- Subject category
- S36: MATERIALS SCIENCE; S74: ATOMIC AND MOLECULAR PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ATOMS; CHARGE DENSITY; DENSITY FUNCTIONAL METHOD; DENSITY OF STATES; ELECTRONIC STRUCTURE; FORMATION HEAT; HELIUM; INTERSTITIALS; METALS
- Descriptors DEC
- CALCULATION METHODS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENTHALPY; FLUIDS; GASES; NONMETALS; PHYSICAL PROPERTIES; POINT DEFECTS; RARE GASES; REACTION HEAT; THERMODYNAMIC PROPERTIES; VARIATIONAL METHODS