Published July 1, 2018 | Version v1
Journal article

First-principles study of atom doping

  • 1. Xi'an High-tech Research Institute, Xian 710025 China (China)

Description

The crystal structures of H, N, O and He atoms in Al metal are studied by using the first-principles calculation method based on the density functional theory. The site occupations of H, O, N and He atoms at the interstitials of the Al lattice are discussed by means of crystal structure and formation energy, and the electronic structures of Al are analyzed by density of states, charge density and charge population. The results show that H, O and N atoms are in the tetrahedral interstice, whereas He atom is more stable in the octahedral interstice of Al metal. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1757-899X/394/2/022003

Additional details

Publishing Information

Journal Title
IOP Conference Series. Materials Science and Engineering (Online)
Journal Volume
394
Journal Issue
2
Journal Page Range
[3 p.]
ISSN
1757-899X

Conference

Title
5. International Conference on Advanced Composite Materials and Manufacturing Engineering
Dates
16-17 Jun 2018
Place
Xishuangbanna (China)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52094153
Subject category
S36: MATERIALS SCIENCE; S74: ATOMIC AND MOLECULAR PHYSICS;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ATOMS; CHARGE DENSITY; DENSITY FUNCTIONAL METHOD; DENSITY OF STATES; ELECTRONIC STRUCTURE; FORMATION HEAT; HELIUM; INTERSTITIALS; METALS
Descriptors DEC
CALCULATION METHODS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENTHALPY; FLUIDS; GASES; NONMETALS; PHYSICAL PROPERTIES; POINT DEFECTS; RARE GASES; REACTION HEAT; THERMODYNAMIC PROPERTIES; VARIATIONAL METHODS