Published December 15, 2009
| Version v1
Journal article
Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates
Creators
- 1. Kumamoto National College of Technology, 2659-2 Suya Koshi, Kumamoto 861-1102 (Japan)
- 2. Centro Nacional de Microelectronica (CNM-CSIC), Campus U.A.B, 08193, Bellaterra, Barcelona (Spain)
- 3. IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)
- 4. State Key Laboratory of Silicon Materials, Zhejiang University, 310027 Hangzhou (China)
- 5. Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, B-9000 Ghent (Belgium)
Description
Electron irradiation induced damage in diodes fabricated on germanium-doped and non-germanium-doped Czochralski (CZ) silicon substrates is studied. In general, both the reverse and forward current increase by irradiation. An interesting observation is, however, that the forward current decreases after 1017 e/cm2 irradiation for a forward voltage larger than ∼0.7 V. This reduction can be explained by an increased resistivity of the substrate. After irradiation, the capacitance decreases due to deactivation of the phosphorus dopant. From IV and CV characteristics, there is a limited difference between the effect of electron irradiation of CZ-SiGe and CZ-Si based diodes.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2009.08.130Additional details
Identifiers
- DOI
- 10.1016/j.physb.2009.08.130;
- PII
- S0921-4526(09)00899-0;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 404
- Journal Issue
- 23-24
- Journal Page Range
- p. 4671-4673
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 25. international conference on defects in semiconductors
- Dates
- 20-24 Jul 2009
- Place
- St. Petersburg (Russian Federation)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41089626
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CAPACITANCE; COMPARATIVE EVALUATIONS; CRYSTAL DEFECTS; CZOCHRALSKI METHOD; DEACTIVATION; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRON BEAMS; GERMANIUM ADDITIONS; GERMANIUM SILICIDES; IRRADIATION; PHYSICAL RADIATION EFFECTS; SILICON; SILICON DIODES; SUBSTRATES
- Descriptors DEC
- ALLOYS; BEAMS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTS; EVALUATION; GERMANIUM ALLOYS; GERMANIUM COMPOUNDS; LEPTON BEAMS; MATERIALS; PARTICLE BEAMS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS; SILICIDES; SILICON COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.