Published April 2008 | Version v1
Journal article Metadata-only

Re-crystallization of Mn implanted GaAs by He+ ion irradiation

Creators

  • 1. Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
  • 2. Nuclear Science and Technology Development Center, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
  • 3. Department of Electrical Engineering, Chung Cheng Institute of Technology, National Defense University, Taoyuan 335, Taiwan (China)

Description

Mn ions were implanted into p-GaAs:Zn substrates at room temperature. Post-annealing was performed using 350 keV He+ ion irradiation at a temperature of 150-250 deg. C. The structure of the films before and after annealing was characterized by X-ray diffraction. The depth profiles of the implanted Mn+ were measured by secondary ion mass spectrometry. The results indicated that the Mn+ implanted GaAs layer had been epitaxially re-grown without formation of 2nd phase

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nimb.2008.01.062

Additional details

Identifiers

DOI
10.1016/j.nimb.2008.01.062;
PII
S0168-583X(08)00066-9;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Journal Volume
266
Journal Issue
8
Journal Page Range
p. 1734-1736
ISSN
0168-583X
CODEN
NIMBEU

Conference

Title
18. international conference on ion beam analysis
Dates
23-28 Sep 2007
Place
Hyderabad (India)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40013477
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; CRYSTALLIZATION; DEPTH; EPITAXY; FILMS; GALLIUM ARSENIDES; HELIUM IONS; ION BEAMS; ION IMPLANTATION; IRRADIATION; KEV RANGE; LAYERS; MANGANESE IONS; MASS SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; X-RAY DIFFRACTION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CHARGED PARTICLES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; DIMENSIONS; ENERGY RANGE; GALLIUM COMPOUNDS; HEAT TREATMENTS; IONS; MATERIALS; PHASE TRANSFORMATIONS; PNICTIDES; SCATTERING; SPECTROSCOPY; TEMPERATURE RANGE

Optional Information

Copyright
Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.