Published April 2012 | Version v1
Journal article

Double resonance Raman effects in InN nanowires

  • 1. Institut Jaume Almera, Consell Superior d'Investigacions Cientifiques (CSIC), Lluis Sole i Sabaris s.n., Barcelona, Catalonia (Spain)
  • 2. Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany)
  • 3. Institute of Bio- and Nanosystems, Research Center Juelich GmbH, Juelich (Germany)
  • 4. Faculty of Science and Engineering, Ritsumeikan University, Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan)

Description

We study the excitation wavelength dependence of the Raman spectra of InN nanowires. The E1(LO) phonon mode, which is detected in backscattering configuration because of light entering through lateral faces, exhibits an upward frequency shift that can be explained by Martin's double resonance. The E1 (LO)/E2h intensity ratio increases with the excitation wavelength more rapidly than the A1(LO)/E2h ratio measured in InN thin films. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssr.201206057

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi rrl
Journal Volume
6
Journal Issue
4
Journal Page Range
p. 160-162
ISSN
1862-6254

Optional Information

Notes
With 3 figs., 21 refs.