Published June 1987
| Version v1
Journal article
Amorphous-crystal transition study of silicon implanted by rare gases
Description
no abstract available
Additional details
Additional titles
- Original title (French)
- Etude de la transition cristal-amorphe du silicium implante par des gaz rares
Publishing Information
- Journal Title
- J. Microsc. Spectrosc. Electron.
- Journal Volume
- 12
- Journal Issue
- 3
- Series
- J. Microsc. Spectrosc. Electron.
- Journal Page Range
- 34a
- ISSN
- 0395-9279
- CODEN
- JMSED
Conference
- Title
- 27. Annual meeting of the French Society for Electron Microscopy.
- Dates
- 20-22 May 1987.
- Place
- Talence (France).
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 19008163
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ARGON IONS; CRYSTAL-PHASE TRANSFORMATIONS; ION IMPLANTATION; KEV RANGE 10-100; MEDIUM TEMPERATURE; PHYSICAL RADIATION EFFECTS; SILICON; XENON IONS
- Descriptors DEC
- CHARGED PARTICLES; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; PHASE TRANSFORMATIONS; RADIATION EFFECTS; SEMIMETALS
Optional Information
- Notes
- Published in summary form only.