Published 1987 | Version v1
Journal article Metadata-only

Low-temperature formation of intrinsic defects by VUV-irradiation in glassy SiO2 with hydroxyl

Creators

  • 1. Latvijskij Gosudarstvennyj Univ., Riga. (USSR). Nauchno-Issledovatel'skij Inst. Fiziki Tverdogo Tela

Description

It is shown that stable intrinsic defects (nonbridging oxygen atoms and three-coordinated silicon atoms) are created in synthetic glassy SiO2 (KY-I and Corning 7940) at liquid nitrogen temperature (LNT) by photon irradiation in the VUV spectra region. Both the annealing of VUV-induced intrinsic defects and the influence of hardening upon the formation and annealing of intrinsic defects have been studied. Different mechanisms of defect formation in glassy SiO2 by VUV-irradiation have been proposed

Additional details

Additional titles

Original title (Russian)
Низкотемпературное создание собственных дефектов VUF-облучением в стеклообразном SiO

Publishing Information

Journal Title
Izv. Akad. Nauk Latv. SSR, Ser. Fiz. Tekh. Nauk
Journal Issue
no.5
Series
Izv. Akad. Nauk Latv. SSR, Ser. Fiz. Tekh. Nauk.
ISSN
0321-1673
CODEN
IALFA

INIS

Country of Publication
Latvia
Country of Input or Organization
USSR
INIS RN
19096870
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ABSORPTION SPECTRA; E CENTERS; EXTREME ULTRAVIOLET RADIATION; GLASS; HYDROXYL RADICALS; LOW TEMPERATURE; PHYSICAL RADIATION EFFECTS; SILICON OXIDES; TEMPERATURE DEPENDENCE
Descriptors DEC
CHALCOGENIDES; COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; OXIDES; OXYGEN COMPOUNDS; POINT DEFECTS; RADIATION EFFECTS; RADIATIONS; RADICALS; SILICON COMPOUNDS; SPECTRA; ULTRAVIOLET RADIATION; VACANCIES