Published November 1985
| Version v1
Journal article
Radial position-sensitive semiconductor detector
- 1. Joint Institute for Nuclear Research, Dubna
Description
The fabrication technology and principal characteristics of a radial position-sensitive silicon semiconductor detector that can be used in experiments on particle scattering are described. The response nonlinearity is less than or equal to 1% in the active region of the detector (2-19 mm along the radius)
Additional details
Publishing Information
- Journal Title
- Instrum. Exp. Tech. (Engl. Transl.)
- Journal Volume
- 28
- Journal Issue
- 3,PT.1
- Series
- Instrum. Exp. Tech. (Engl. Transl.).
- Journal Page Range
- 561-563
- ISSN
- 0020-4412
- CODEN
- INETA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 18083402
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ALPHA PARTICLES; ANNEALING; ETCHING; FABRICATION; ION IMPLANTATION; P-N JUNCTIONS; PERFORMANCE; PHOSPHORUS IONS; POSITION SENSITIVE DETECTORS; RESPONSE FUNCTIONS; SCATTERING; SI SEMICONDUCTOR DETECTORS; SPATIAL RESOLUTION; SURFACE BARRIER DETECTORS
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; FUNCTIONS; HEAT TREATMENTS; HELIUM IONS; IONIZING RADIATIONS; IONS; MEASURING INSTRUMENTS; RADIATION DETECTORS; RADIATIONS; RESOLUTION; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR JUNCTIONS
Optional Information
- Notes
- Translated from Pribory i Tekhnika Eksperimenta, No. 3, pp. 57-59, May-June, 1985.. Cover-to-cover translation of Pribory i Tekhnika Ehksperimenta (USSR).