Published 1989 | Version v1
Book Metadata-only

Studies of an InAs/GaAs heterojunction by total-electron-yield

Creators

  • 1. Dept. of Physics, State Univ. of New York at Stony Brook, Stony Brook, NY (USA)
  • 2. IBM Thomas J. Watson Research Center, Yorktown Heights, NY (USA)

Description

Total electron yield (TEY) of an InAs/GaAs heterojunction due to soft x-ray excitation has been studied. This heterojunction was prepared by an overgrowth of a 600 A InAs layer on a GaAs substrate using molecular beam epitaxy. In this paper, experimental data are compared with theoretical analysis based on a modified Fresnel formulation to calculate the wave field distribution in stratified media with interfacial roughness. The TEY angular profiles obtained at a given x-ray energy reveal information on the interfacial roughness, secondary electron escape length, attenuation length of elastically scattered photo-electrons, and optical constants of the epilayer in the x-ray regime

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (USA)
ISBN
1-55899-016-X
Imprint Title
Synchrotron radiation in materials research
Imprint Pagination
304 p.
Series
Materials Research Society symposium proceedings. Volume 143.
Journal Page Range
p. 25-30.

Conference

Title
Synchrotron radiation in materials research.
Dates
28-30 Nov 1988.
Place
Boston, MA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
21042591
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
CHEMICAL REACTION YIELD; COMPARATIVE EVALUATIONS; ELASTIC SCATTERING; ELECTRONIC STRUCTURE; ELECTRONS; EPITAXY; EXCITED STATES; EXPERIMENTAL DATA; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; INTERACTIONS; MOLECULAR BEAMS; PHOTOELECTRON SPECTROSCOPY; SOFT X RADIATION; THEORETICAL DATA; THIN FILMS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BEAMS; DATA; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELEMENTARY PARTICLES; ENERGY LEVELS; EVALUATION; FERMIONS; FILMS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INFORMATION; IONIZING RADIATIONS; LEPTONS; NUMERICAL DATA; PNICTIDES; RADIATIONS; SCATTERING; SEMICONDUCTOR JUNCTIONS; SPECTROSCOPY; X RADIATION

Optional Information

Secondary number(s)
CONF-8811224--.