Published November 1981
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Palladium silicide - a new contact for semiconductor radiation detectors
Description
Silicide layers can be used as low resistance contacts in semiconductor devices. The formation of a metal rich palladium silicide Pd2Si is discussed. A palladium film 100A thick is deposited at 3000C and the resulting silicide layer used as an ohmic contact in an n + p silicon detector. This rugged contact has electrical characteristics comparable with existing evaporated gold contacts and enables the use of more reproducible bonding techniques. (author)
Availability note (English)
MF available from INIS under the Report Number.
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Additional details
Publishing Information
- Imprint Pagination
- 26 p.
- Report number
- AERE-R--10107
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 13696718
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; LAYERS; P-TYPE CONDUCTORS; PALLADIUM SILICIDES; SI SEMICONDUCTOR DETECTORS; SILICON DIODES
- Descriptors DEC
- ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; MEASURING INSTRUMENTS; PALLADIUM COMPOUNDS; PHYSICAL PROPERTIES; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS