Published May 18, 2006
| Version v1
Journal article
Diluted magnetic semiconductor Ge1-xMn xTe films prepared by molecular beam epitaxy
- 1. Data Storage Institute, 5 Engineering Drive 1, Singapore 117608 (Singapore)
- 2. Information Storage Material Laboratory, Department of Electric and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)
Description
We report the growth of IV-VI diluted magnetic semiconductor Ge1-xMn xTe thin films on BaF2 (111) substrates with high Mn ion concentration (x 0.98) by solid-source molecular-beam epitaxy. The film structure and orientation were characterized by in-situ reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD). The chemical concentration was determined by X-ray Photoelectron Spectroscopy (XPS). The thin film shows ferromagnetic ordering at 130 K, as determined from temperature-dependent magnetization
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2005.10.023;
- PII
- S0040-6090(05)01937-1;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 505
- Journal Issue
- 1-2
- Journal Page Range
- p. 145-147
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- International conference on materials for advanced technologies - Symposium D: Magnetic nanomaterials and devices
- Acronym
- ICMAT 2005
- Dates
- 3-8 Jul 2005
- Place
- Singapore (Singapore)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38004591
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRON DIFFRACTION; GERMANIDES; MAGNETIC SEMICONDUCTORS; MAGNETIZATION; MANGANESE IONS; MANGANESE TELLURIDES; MOLECULAR BEAM EPITAXY; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; THIN FILMS; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTRON SPECTROSCOPY; EPITAXY; FILMS; GERMANIUM COMPOUNDS; IONS; MANGANESE COMPOUNDS; MATERIALS; PHOTOELECTRON SPECTROSCOPY; SCATTERING; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; TELLURIDES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.